 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UTC US108S/N SCRs DESCRIPTION The UTC US108S/N is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. SCR 1 TO-220 1: CATHODE 2: ANODE 3: GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages US108S/N-4 US108S/N-6 US108S/N-8 RMS on-state current (180 conduction angle) (Tc = 110C) Average on-state current (180 conduction angle) (Tc = 110C) Non repetitive surge peak on-state current (Tj = 25C) tp=8.3ms tp=10ms It Value for fusing (tp = 10 ms ,Tj = 25C) Critical rate of rise of on-state current (IG = 2 x IGT , tr 100 n s, Tj = 125C, F = 60 Hz) Peak gate current (tp=20s, Tj = 125C) Maximum peak reverse gate voltage Average gate power dissipation (Tj = 125C) Storage junction temperature range Operating junction temperature range SYMBOL VDRM VRRM IT(RMS) IT(AV) ITSM It dI/dt IGM VRGM PG(AV) Tstg Tj RATING US108S US108N 400 600 800 8 5 73 70 24.5 50 4 5 1 -40 ~ +150 -40 ~ +125 100 95 45 UNIT V A A A AS A/s A V W C C UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-012,B UTC US108S/N UTC US108S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified) SCR TEST CONDITIONS VD = 12 V, RL =140 VD = 12 V, RL=140 PARAMETER Gate trigger Current Gate trigger Voltage Gate non-trigger voltage Reverse gate voltage Holding Current Latching Current Circuit Rate Of Change Of off-state Voltage On-state voltage SYMBOL IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM MIN MAX. 200 0.8 UNIT A V V VD = VDRM, RL = 3.3 k, RGK = 220 Tj = 125C IRG = 10 A IT = 50 mA, RGK = 1 k IG = 1 mA ,RGK = 1 k 0.1 8 5 6 5 1.6 0.85 46 5 1 V mA mA V/s V V m A mA VD = 65 % VDRM ,RGK = 220 Tj = 125C ITM = 16A, tp = 380 s Tj = 25C Tj = 125C Tj = 125C Threshold Voltage Dynamic Resistance Off-state Leakage Current VDRM = VRRM, RGK = 220 Tj = 25C Tj = 125C UTC US108N(STANDARD) ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified) PARAMETER Gate trigger Current Gate trigger Voltage Gate non-trigger voltage Holding Current Latching Current Circuit Rate Of Change Of off-state Voltage On-state voltage SYMBOL IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM TEST CONDITIONS VD = 12 V, RL =33 VD = 12 V, RL=33 MIN 2 MAX. 15 1.3 UNIT mA V V VD = VDRM, RL = 3.3 k, Tj = 125C IT = 100 mA, Gate open IG = 1.2 IGT VD = 67 % VDRM , Gate open,Tj = 125C 0.2 30 70 150 1.6 0.85 46 5 2 mA mA V/s V V m A mA ITM = 16A, tp = 380 s, Tj = 25C Tj = 125C Tj = 125C Threshold Voltage Dynamic Resistance Off-state Leakage Current VDRM = VRRM Tj = 25C Tj = 125C THERMAL RESISTANCES PARAMETER Junction to case (DC) Junction to ambient (DC) SYMBOL VALUE 20 60 UNIT Rth(j-c) Rth(j-a) K/W K/W UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-012,B UTC US108S/N Fig.1:Maximum average power dissipation vs average on-state current 8 7 6 5 4 3 2 1 0 0 1 2 IT(av)(A) 3 4 360 p(w) =180 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 SCR Figure.2:Average and D.C. on-state current vs case temperature IT(av)(A) DC =180 5 6 2.0 1.0 0.0 0 25 Tcase() 50 75 100 125 Figure.3: Relative variation of thermal impedance junctio to case vs pulse duration K=[Zth(j-c)/Rth(j-c)] 1.0 Figure.4:Relative variation of gate trigger current,holding current and latching vs junction temperature .(US108S) 2.0 1.8 1.6 1.4 IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25) IGT IH&IL Rgk=1k 0.5 1.2 1.0 0.8 0.2 0.6 0.4 0.1 tp(s) 1E-2 1E-1 1E+0 0.2 0.0 -40 -20 0 20 Tj() 40 60 80 100 120 140 1E-3 Figure.4-2:Relative variation of gate trigger current,holding current and latching vs junction temperature .(US108N) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 120 140 Figure.5:Relative variation of holding current vs gatecathode resistance(typical values) (US108S) IH(Rgk)/IH(Rgk=1k) IGT TJ=25 IH&IL Rgk(k) 1E-1 1E+0 1E+1 Tj() 40 60 80 100 1E-2 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-012,B UTC US108S/N Fig.6: Relative variation of dV/dt immunity vs gatecathode resistance(typical values) (US108S) 10.00 dV/dt(Rgk)/dV/dt(Rgk=220) Tj=125 VD=0.67* VDRM 15.0 12.5 10.0 7.5 0.10 5.0 2.5 0.01 0 200 400 Rgk() 600 800 1000 1200 1400 1600 1800 2000 0.0 Cgk(nF) 0 20 40 60 dV/dt(Cgk)/dV/dt(Rgk=220) Tj=125 VD=0.67* VDRM Rgk=220 SCR Fig.7: Relative variation of dV/dt immunity vs gatecathode resistance(typical values) (US108S) 1.00 80 100 120 140 160 180 200 220 Figure.8: Surge peak on-state current vs number of cycles. 100 90 80 70 60 50 40 30 20 10 0 ITSM(A) US108N Non repetitive Tj Iinitial=25 US108S Repetitive Tcase=110 Number of cycles 1 10 100 Fig.9:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding 2 values of I t. 2 2 ITSM(A),I t(A s) 1000 Tjinitial=25 US108N US108S US108N I2 t tp(ms) 1000 10 0.01 0.10 1.00 US108S 10.00 tp=10ms One cycle ITSM 100 dI/dt limitation Fig.10: On-state characteristics(maximum values). ITM(A) Tj=max: Vto=0.85V Rd=46m Tj=Tjmax. 50.0 10.0 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-012,B UTC US108S/N SCR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-012,B |
Price & Availability of US108S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |